Plasma Processes

Dissipative elastomers

Sealing in plasma processes – where chemical and thermal challenges can be intense – places serious demands on elastomer materials.

PPE has developed a range of sealing materials which are engineered to perform reliably in close proximity to the wafer or substrate.

plasma processes for semiconductor manufacturing

Plasma Process Applications

Applications for elastomer sealing in plasma processes can involve: door seals, centering rings for flanges, exhaust valves, window seals, valve seals, chamber lid seals, cushioning for wafer transport.

Delivering proven performance for leading semiconductor manufacturers

All seals, particularly those in critical locations, will degrade over a period of time. No single seal material is optimized for all chemistries or applicable to every tool location and product type. Appropriate choice of PPE recommended products will lead to:-

  • Cost optimized recommendation dependent on application
  • Low erosion rates
  • Low trace metal levels where critical
  • Low particle release rates where critical
  • Minimized impact on device yield and electrical yield
  • Reduced cost of consumables (CoC)

Recommended materials for plasma applications

The table below indicates recommended and compatible elastomer material grades. Primary grades are geared towards critical system/tool locations.

For further guidance on appropriate sealing choices in plasma environments, get in touch with our experts for application-specific advice.

Picture of some silicone chips
Process/applicationTemperature rangeProcess mediaPrimary materialsCompatible materials
PECVD / HPDCVD25 – 300°C
(77 – 572°F)
SiH4, N2, NH3, N2O, NO, Organosilanes/siloxanes, O2, CF4, C2F6, C3F8, SF6, SiF4, NF3G7HA, G65HPG70H, G76W
Resist Strip / Ash25 – 200°C
(77 – 392°F)
O2, CF4, SF6, CHF3, NH3, H2, H2O, NO, N2O, Forming Gas G65HP, G70HG75H, G76W
Dielectric Etch25 – 200°C
(77 – 392°F)
H2, O2, CO, CO2, NO, NO2, N2O, CS2, COS, CF4, CH4, CHF3, C2F4, C2F6, C3F8, C4F8, C4F6, C4F10, C5F8, C6F6, SF6G65HP, G7HAG70H, G75H, G76W
Conductor Etch25 – 200°C
(77 – 392°F)
CF4, CHF3, C2F6, C3F8, SF6, HBr, BCl3, SiCl4, CCl4, Cl2, CCl2F2, O2, CO, NO, N2O, NF3G70H, G65HPG75H, G76W, V75SC

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