Plasma resistant elastomers

Semiconductor o-rings background

Plasma resistant elastomers face some of the most aggressive environments of any application or industry catered by PPE.

PPE has developed and manufactured sealing materials to perform in critical locations directly exposed to these plasma chemistries, and in close proximity to the wafer or substrate.

Sealing in plasma environments

All seals, particularly those in critical locations, will degrade over a period of time. No single seal material is optimized for all chemistries, or applicable to every tool location and product type. Some of the most aggressive plasma processes for seals include oxygen resist strip, and radical-based plasmas such as NF3 etching and chamber cleans using remote plasma sources (RPS).

Whatever the operating environment, PPE’s team of semiconductor sealing specialists can advice on the appropriate plasma resistant elastomers for your application. The correct specification can lead to:

  • Cost optimized recommendation, dependent on application
  • Low erosion rates
  • Low trace metal levels, where critical
  • Low particle release rates, where critical
  • Minimized impact on device yield and electrical yield
  • Reduced cost of consumables (CoC)
Abstract plasma banner in blue and black

PPE’s range of plasma resistance elastomers are engineered to deliver both purity and plasma resistance in some of the most aggressive chemistries.

Recommended materials for plasma applications

The table below indicates recommended and compatible elastomer material grades. Primary grades are geared towards critical system/tool locations.

For further guidance on appropriate sealing choices in plasma environments, get in touch with our experts for application-specific advice.

Picture of some silicone chips
Process/applicationTemperature rangeProcess mediaPrimary materialsCompatible materials
PECVD / HPDCVD25 – 300°C
(77 – 572°F)
SiH4, N2, NH3, N2O, NO, Organosilanes/siloxanes, O2, CF4, C2F6, C3F8, SF6, SiF4, NF3G7HA, G65HPG70H, G76W
Resist Strip / Ash25 – 200°C
(77 – 392°F)
O2, CF4, SF6, CHF3, NH3, H2, H2O, NO, N2O, Forming Gas G65HP, G70HG75H, G76W
Dielectric Etch25 – 200°C
(77 – 392°F)
H2, O2, CO, CO2, NO, NO2, N2O, CS2, COS, CF4, CH4, CHF3, C2F4, C2F6, C3F8, C4F8, C4F6, C4F10, C5F8, C6F6, SF6G65HP, G7HAG70H, G75H, G76W
Conductor Etch25 – 200°C
(77 – 392°F)
CF4, CHF3, C2F6, C3F8, SF6, HBr, BCl3, SiCl4, CCl4, Cl2, CCl2F2, O2, CO, NO, N2O, NF3G70H, G65HPG75H, G76W, V75SC

Need more help? Speak to one of our experts today.

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