Plasma processes

Plasma processes are amongst the most aggressive for elastomer seals, particularly those in critical locations that are exposed to the chemistry and in proximity to the wafer or substrate. The most aggressive plasma processes for seals include oxygen resist strip and radical based plasmas such as remote NF3 etching and chamber cleans using remote plasma sources (RPS).

All seals, particularly those in critical locations, will degrade over a period of time. No single seal material is optimized for all chemistries or applicable to every tool location and product type. Appropriate choice of PPE recommended products will lead to:-

  • Cost optimized recommendation dependent on application
  • Low erosion rates
  • Low trace metal levels where critical
  • Low particle release rates where critical
  • Minimized impact on device yield and electrical yield
  • Reduced cost of consumables (CoC)

The table below indicates recommended and compatible elastomer material grades. Primary grades are geared towards critical system / tool locations.

Extensive plasma resistance testing was carried out on 20+ elastomer materials available on the market, including those from the leading suppliers.  Find out how each material performed in terms of erosion rates in four basic plasma chemistries relative to equivalent PPE grades.

For further guidance on appropriate seal choices please find your nearest sales contact.

Process/applicationsTemperature
range
Process mediaPrimary
materials
Compatible
materials
Comments
PECVD / HPDCVD

25 - 200°C
(77 - 392°F)
SiH4, N2, NH3, N2O, NO, Organosilanes/siloxanes, O2, CF4, C2F6, C3F8, SF6, SiF4G67G, G67PG65HP, G75H, G74P, G76W, K2CD, Y75G, V75SCExact recommendation primarily dependent on chamber clean chemistry and defect / trace metal contamination specification.
NF3, F2, high radical remote cleanG65HP, G67GK2CD, G75H, G76W
Resist Strip / Ash25 - 200°C
(77 - 392°F)
O2, CF4, SF6, CHF3, NH3, H2, H2O, NO, N2O, Forming GasG67G, G65HP, Y75GG75H, G76W, K2CD, Y75NG65HP generally good in multiple chemical environments and particularly suited to high radical processes.
G76W, Y75G, Y75N, K13X are lower cost options.



Dielectric Etch25 - 200°C
(77 - 392°F)
H2, O2, CO, CO2, NO, NO2, N2O, CS2, COS, CF4, CH4, CHF3, C2F4, C2F6, C3F8, C4F8, C4F6, C4F10, C5F8, C6F6, SF6G65HP, G67G, Y75GG67P, G74P, G75H, G76W, K2CD, Y75N
Conductor Etch
25 - 200°C
(77 - 392°F)

CF4, CHF3, C2F6, C3F8, SF6, HBr, BCl3, SiCl4, CCl4, Cl2, CCl2F2 G65HP, G67G, Y75GG67P, G74P, G75H, G76W, K2CD, K13X, Y75N
O2, CO, NO, N2O, NF3G65HP, G67GG76W, G75H, K2CD
Document Downloads
Document Description Download
Whitepaper Purity or Plasma Resistance - can you have both?
SUBSCRIBE TO THE PPE NEWSLETTER TO KEEP UP TO DATE WITH ALL THE LATEST NEWS
Thanks for subscribing to the newsletter.