Perlast Helios G7HA

Perlast Helios G7HAPerlast® Helios G7HA is a high purity perfluoroelastomer (FFKM) that offers outstanding long-term mechanical performance and excellent plasma resistance in high temperature semiconductor applications of up to 310°C.

This 70 A Shore FFKM is fully organic in formulation, offering extremely low trace metal levels for higher yields and reduced process contamination.

Perlast® Helios G7HA – the first material in the range – has undergone rigorous benchmarking tests against the leading sealing materials currently on the market in order to qualify its material characteristics.

The test results demonstrated excellent sealing performance at temperatures up to 310°C. The new elastomer grade also outperforms competitor materials against aggressive plasmas, including high concentrations of fluorine radical plasmas.

  • Outperforms in harsh plasma environments

    Perlast® Helios G7HA has been tested extensively in a series of plasma environments (RPS NF3, RIE NF3, CCP NH3, RIE SF6, RIE O2 and CCP O2). In each environment, the new G7HA grade demonstrates a significantly lower plasma erosion rate than leading competitors – and 27% lower in NF3.

    Perlast Helios G7HA NF3 Plasma Data

    Figure 1: RIE NF3 Plasma exposure, elastomer weight loss percentage after 6 hours.

  • Lower trace metals than other FFKM seals

    Perlast® Helios G7HA is a fully organic material grade, with analysis showing extremely low trace metal level contaminates and low particle generation when measured against comparable FFKM and FKM sealing materials. Low trace metals and low particle generation are key to reducing process contamination, significantly increasing yield and reducing operational downtime.

  • Perlast Helios G7HA removes trade-off between purity and performance

    Previously in the semiconductor sealing market, choices had to be made between seal purity and high performance in a sealing system – and particularly so with purity versus plasma resistance. Perlast® Helios G7HA is one of the first elastomer innovations to give reliable results across both purity and resistance to aggressive plasmas and chemical media.

  • Typical Applications

    Developed for use in various semiconductor applications. Suitable for use in wet and dry semiconductor processes including:

    • Etching
    • Stripping
    • Cleaning
    • LPCVD, HDPCVD, PECVD, SACVD, ALD, PVD, MDP, EPI
  • Typical Seal Types

    Perlast® Helios G7HA material can be moulded into dynamic and static sealing products, including isolation valves, chamber O-rings and gas inlet seals.

Dielectric Etch

Perlast Helios G7HA Spider Diagram

The above spider diagram is a graphical overview of Perlast® Helios G7HA material performance characteristics compared with a relevant industry competitor based on a Dielectric Etch application.

Join us at this year's leading semiconductor trade shows

If you want to meet us in person and explore our high performance elastomer seals, come and join us at the leading Semiconductor tradeshows hosted around the globe.

Event Event Location Event Date
SEMICON China 2019 Booth #3138, New International Expo Center, Shanghai, China 20/03/2019 - 22/03/2019
SEMICON Southeast Asia 2019 Booth #401, MITEC, Kuala Lumpur, Malaysia 07/05/2019 - 09/05/2019
SEMICON West 2019 Booth #1061, Moscone Center, San Francisco, United States 09/07/2019 - 11/07/2019
SEMICON Taiwan 2019 Booth #I2122 Hall 1F, Taipei Nangang Exhibition Center Hall 1, Taiwan 18/09/2019 - 20/09/2019
SEMICON Japan 2019 Tokyo Big Sight, Tokyo 11/12/2019 - 13/12/2019
Event Date Event Details
20/03/2019 - 22/03/2019 SEMICON China 2019 Booth #3138, New International Expo Center, Shanghai, China
07/05/2019 - 09/05/2019 SEMICON Southeast Asia 2019 Booth #401, MITEC, Kuala Lumpur, Malaysia
09/07/2019 - 11/07/2019 SEMICON West 2019 Booth #1061, Moscone Center, San Francisco, United States
18/09/2019 - 20/09/2019 SEMICON Taiwan 2019 Booth #I2122 Hall 1F, Taipei Nangang Exhibition Center Hall 1, Taiwan
11/12/2019 - 13/12/2019 SEMICON Japan 2019 Tokyo Big Sight, Tokyo

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